| PART |
Description |
Maker |
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| HN27C4096HG-85 HN27C4096HCC HN27C4096HCC-85 HN27C4 |
262,144-word x 16-bit CMOS UV Erasable and Programmable ROM 262,144字16位CMOS紫外线可擦除只读存储
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| MSM512800A MSM512800A-45 MSM512800A-50 MSM512800A- |
262,144-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 262,144字8位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| MSM54V16258A |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 262,144字16位动态随机存储器：快速页面模式型与江
|
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V402D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM
From old datasheet system
|
OKI
|
| TC554161FTI-10L TC554161FTI-85L |
262,144-WORD BY 16-BIT STATIC RAM
|
Toshiba Corporation
Toshiba Semiconductor
|
| TC514260BJ |
262,144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| MSM548262-70JS MSM548262-70TS-K MSM548262-80JS OKI |
262,144-Word x 8-Bit Multiport DRAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM5416273 |
262,144-Word x 16-Bit Multiport DRAM
|
OKI electronic componets
|
| TC554161AFT-85V TC554161AFT-70V TC554161AFT-10V |
262,144-WORD BY 16-BIT STATIC RAM
|
TOSHIBA
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
